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FDS7760A|ONSEMI|simage
FDS7760A|ONSEMI|limage
MOSFET

FDS7760A

Trans MOSFET N-CH 30V 15A 8-Pin SOIC T/R

onsemi
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Supplier Unconfirmed
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Obsolete
  • Codice HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    15
  • Maximum Drain-Source Resistance (mOhm)
    5.5@10V
  • Typical Gate Charge @ Vgs (nC)
    37@5V
  • Typical Input Capacitance @ Vds (pF)
    3514@15V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    32
  • Typical Rise Time (ns)
    12
  • Typical Turn-Off Delay Time (ns)
    78
  • Typical Turn-On Delay Time (ns)
    13
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.5(Max)
  • Package Width
    3.9
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC
  • Pin Count
    8
  • Lead Shape
    Gull-wing

Documentazione e Risorse

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Risorse di progettazione