Specifiche Tecniche del Prodotto
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±25
Maximum Continuous Drain Current (A)
70
Maximum Drain-Source Resistance (mOhm)
6@10V
Typical Gate Charge @ Vgs (nC)
31.2@4.5V|64.2@10V
Typical Gate Charge @ 10V (nC)
64.2
Typical Input Capacitance @ Vds (pF)
2826@15V
Maximum Power Dissipation (mW)
2800
Typical Fall Time (ns)
125
Typical Rise Time (ns)
4.3
Typical Turn-Off Delay Time (ns)
306
Typical Turn-On Delay Time (ns)
4.8
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
0.78
Package Width
3.3
Package Length
3.3
PCB changed
8
Supplier Package
PowerDI EP
Pin Count
8
Lead Shape
No Lead