Specifiche Tecniche del Prodotto
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.8
Maximum Continuous Drain Current (A)
14.4
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
59@10V
Typical Gate Charge @ Vgs (nC)
4.3@10V
Typical Gate Charge @ 10V (nC)
4.3
Typical Gate to Drain Charge (nC)
0.8
Typical Input Capacitance @ Vds (pF)
349@50V
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
2
Typical Rise Time (ns)
3
Typical Turn-Off Delay Time (ns)
7
Typical Turn-On Delay Time (ns)
5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Gate Threshold Voltage (V)
3.2
Mounting
Surface Mount
Package Height
0.75(Max)
Package Width
2.1(Max)
Package Length
2.1(Max)
PCB changed
6
Standard Package Name
SON
Supplier Package
WSON EP
Pin Count
6
Lead Shape
No Lead
Quantità Ordine