Specifiche Tecniche del Prodotto
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.5
Maximum Continuous Drain Current (A)
50
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
14@10V
Typical Gate Charge @ Vgs (nC)
14@10V
Typical Gate Charge @ 10V (nC)
14
Typical Gate to Drain Charge (nC)
2.3
Typical Input Capacitance @ Vds (pF)
1140@30V
Maximum Power Dissipation (mW)
94000
Typical Fall Time (ns)
3.9
Typical Rise Time (ns)
3.2
Typical Turn-Off Delay Time (ns)
12.6
Typical Turn-On Delay Time (ns)
4.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Typical Gate Threshold Voltage (V)
3
Mounting
Through Hole
Package Height
9.15
Package Width
4.55
Package Length
10.16
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3
Lead Shape
Through Hole