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CSD17310Q5A|TI|limage
CSD17310Q5A|TI|simage
MOSFET

CSD17310Q5A

Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R

Texas Instruments

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Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    COMPONENTS
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Process Technology
    0.35um
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum Continuous Drain Current (A)
    21
  • Maximum Drain-Source Resistance (mOhm)
    5.1@8V
  • Typical Gate Charge @ Vgs (nC)
    8.9@4.5V
  • Typical Gate to Drain Charge (nC)
    2.1
  • Typical Input Capacitance @ Vds (pF)
    1200@15V
  • Maximum Power Dissipation (mW)
    3100
  • Typical Fall Time (ns)
    5
  • Typical Rise Time (ns)
    11.5
  • Typical Turn-Off Delay Time (ns)
    15
  • Typical Turn-On Delay Time (ns)
    6.5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Gate Threshold Voltage (V)
    1.3
  • Mounting
    Surface Mount
  • Package Height
    1
  • Package Width
    5.75
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SON
  • Supplier Package
    VSONP EP
  • Pin Count
    8
  • Family/Series
    CSD17310Q5A
  • ROHS Version
    2011/65/EU, 2015/863
  • Quantity Packaging
    2500
  • MSL
    1
Quantità Ordine

Documentazione e Risorse

Risorse di progettazione