Specifiche Tecniche del Prodotto
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
12
Maximum Gate-Source Voltage (V)
8
Maximum Gate Threshold Voltage (V)
1.2
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
7.1
Maximum Gate-Source Leakage Current (nA)
25
Maximum IDSS (uA)
0.05
Maximum Drain-Source Resistance (mOhm)
19@4.5V
Typical Gate Charge @ Vgs (nC)
3.9@4.5V
Typical Gate to Drain Charge (nC)
0.39
Typical Gate to Source Charge (nC)
0.74
Typical Input Capacitance @ Vds (pF)
519@6V
Typical Reverse Transfer Capacitance @ Vds (pF)
29@6V
Minimum Gate Threshold Voltage (V)
0.5
Typical Output Capacitance (pF)
305
Maximum Power Dissipation (mW)
1400
Typical Fall Time (ns)
10
Typical Rise Time (ns)
10
Typical Turn-Off Delay Time (ns)
33
Typical Turn-On Delay Time (ns)
7
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
26@1.8V|18@2.5V|15@4.5V
Maximum Pulsed Drain Current @ TC=25°C (A)
41
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
245(Typ)
Typical Diode Forward Voltage (V)
0.67
Typical Gate Plateau Voltage (V)
1.2
Maximum Diode Forward Voltage (V)
1
Typical Gate Threshold Voltage (V)
0.8
Maximum Positive Gate-Source Voltage (V)
8
Mounting
Surface Mount
Package Height
0.36(Max)
Package Width
0.77(Max)
Package Length
1.53(Max)
PCB changed
3
Supplier Package
PicoStar
Pin Count
3
Lead Shape
No Lead