Specifiche Tecniche del Prodotto
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Obsolete
Codice HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
25
Maximum Gate Threshold Voltage (V)
2.6(Typ)
Operating Junction Temperature (°C)
-40 to 150
Maximum Continuous Drain Current (A)
200(Typ)
Maximum Gate-Source Leakage Current (nA)
1500
Maximum IDSS (uA)
3000
Maximum Drain-Source Resistance (mOhm)
16@20V
Typical Gate Charge @ Vgs (nC)
378@20V
Typical Input Capacitance @ Vds (pF)
6470@800V
Maximum Power Dissipation (mW)
1000000(Typ)
Typical Fall Time (ns)
22
Typical Rise Time (ns)
34
Typical Turn-Off Delay Time (ns)
70
Typical Turn-On Delay Time (ns)
38
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Supplier Temperature Grade
Industrial
Packaging
Box
Mounting
Screw
Package Width
61.4
Package Length
106.4
PCB changed
7
Pin Count
7
Quantità Ordine