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BSS138BKW115|NEXPERIA|simage
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MOSFET

BSS138BKW,115

Trans MOSFET N-CH 60V 0.32A 3-Pin SC-70 T/R Automotive AEC-Q101

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Schede tecniche 

Automotive-grade N-channel trench MOSFET with a maximum drain-source voltage of 60 V, maximum gate-source voltage of 20 V, and a maximum drain current of 320 mA


The BSS138BKW,115 is an SMD SC-70 N-channel trench MOSFET with a maximum drain-source voltage of 60 V, maximum gate-source voltage of 20 V, and a maximum drain current of 320 mA. The BSS138BKW,115 has a forward transconductance of 700 ms, a channel resistance of 1.6 Ω, a rise time of 5 ns, and a fall time of 20 ns. Furthermore, the BSS138BKW,115 has a 1.5-kV in-built ESD protection and an operating temperature range of –55°C to 150°C, and it is AEC-Q101–qualified meaning, that it can be used in automotive applications.



Drawings/Package



Key Features

  • Maximum drain-source voltage of 60 V
  • Maximum gate-source voltage of 20 V
  • Maximum drain current of 320 mA
  • AEC-Q101–qualified
  • Operating temperature of –55°C to 150°C


General Applications

  • Relay drivers
  • Low-side switching
  • SMPS


Evaluation Board

NO — There is no evaluation board for the BSS138BKW,115. The datasheet contains usage application examples.


Specifiche Tecniche del Prodotto
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.75
  • SVHC
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Small Signal
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    1.6
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    0.32
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    1600@10V
  • Typical Gate Charge @ Vgs (nC)
    0.6@4.5V
  • Typical Gate to Drain Charge (nC)
    0.2
  • Typical Gate to Source Charge (nC)
    0.1
  • Typical Input Capacitance @ Vds (pF)
    42@10V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    4@10V
  • Minimum Gate Threshold Voltage (V)
    0.48
  • Typical Output Capacitance (pF)
    7
  • Maximum Power Dissipation (mW)
    310
  • Typical Fall Time (ns)
    20
  • Typical Rise Time (ns)
    5
  • Typical Turn-Off Delay Time (ns)
    38
  • Typical Turn-On Delay Time (ns)
    5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    1.2
  • Typical Diode Forward Voltage (V)
    0.8
  • Maximum Diode Forward Voltage (V)
    1.2
  • Typical Gate Threshold Voltage (V)
    1.1
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.35(Max)
  • Package Length
    2.2(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SC-70
  • Pin Count
    3
  • Lead Shape
    Gull-wing
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Documentazione e Risorse

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