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AON6500|ALPHAO|simage
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MOSFET

AON6500

Trans MOSFET N-CH 30V 200A 8-Pin DFN EP T/R

Alpha and Omega Semiconductor
Schede tecniche 

Specifiche Tecniche del Prodotto
  • 유럽 연합 RoHS 명령어
    Compliant with Exemption
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Active
  • 미국 세관 상품 코드
    COMPONENTS
  • SVHC
    Yes
  • SVHC 기준 초과
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2
  • Maximum Continuous Drain Current (A)
    200
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    0.95@10V
  • Typical Gate Charge @ Vgs (nC)
    49.7@4.5V|107@10V
  • Typical Gate Charge @ 10V (nC)
    107
  • Typical Input Capacitance @ Vds (pF)
    7036@15V
  • Maximum Power Dissipation (mW)
    7300
  • Typical Fall Time (ns)
    28.8
  • Typical Rise Time (ns)
    12.8
  • Typical Turn-Off Delay Time (ns)
    68.5
  • Typical Turn-On Delay Time (ns)
    12.3
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Industrial
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    0.75@10V|1@4.5V
  • Mounting
    Surface Mount
  • Package Height
    0.95(Max)
  • Package Width
    5.55
  • Package Length
    5.2
  • PCB changed
    8
  • Standard Package Name
    DFN
  • Supplier Package
    DFN EP
  • Pin Count
    8
  • Lead Shape
    No Lead
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Documentazione e Risorse

Schede tecniche
Risorse di progettazione