Specifiche Tecniche del Prodotto
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
±30
Maximum Continuous Drain Current (A)
4
Maximum Drain-Source Resistance (mOhm)
900@10V
Typical Gate Charge @ Vgs (nC)
6@10V
Typical Gate Charge @ 10V (nC)
6
Typical Input Capacitance @ Vds (pF)
263@100V
Maximum Power Dissipation (mW)
56800
Typical Fall Time (ns)
12
Typical Rise Time (ns)
8
Typical Turn-Off Delay Time (ns)
40
Typical Turn-On Delay Time (ns)
18
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
780@10V
Mounting
Surface Mount
Package Height
2.29
Package Width
6.1
Package Length
6.6
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
DPAK
Pin Count
3
Quantità Ordine