Specifiche Tecniche del Prodotto
欧盟RoHS指令
Compliant
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.2
Maximum Continuous Drain Current (A)
20
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
5.8@10V
Typical Gate Charge @ Vgs (nC)
6.8@4.5V|15.5@10V
Typical Gate Charge @ 10V (nC)
15.5
Typical Input Capacitance @ Vds (pF)
1037@15V
Maximum Power Dissipation (mW)
3100
Typical Fall Time (ns)
4.3
Typical Rise Time (ns)
3.3
Typical Turn-Off Delay Time (ns)
18
Typical Turn-On Delay Time (ns)
5.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
4.7@10V|7.7@4.5V
Mounting
Surface Mount
Package Height
1.5
Package Width
3.9
Package Length
4.9
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing
Quantità Ordine