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2N4235|MICROCHP|limage
2N4235|MICROCHP|simage
BJT GP

2N4235

Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-39 Bag

Microchip Technology
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Not Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    60
  • Maximum Collector-Emitter Voltage (V)
    60
  • Maximum Base-Emitter Voltage (V)
    7
  • Maximum Base-Emitter Saturation Voltage (V)
    1.1@50mA@500mA|1.5@100mA@1A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.4@50mA@500mA|0.6@100mA@1A
  • Maximum DC Collector Current (A)
    1
  • Minimum DC Current Gain
    40@0.1A@1V|30@250mA@1V|20@500mA@1V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Bag
  • Diameter
    9.4(Max)
  • Mounting
    Through Hole
  • Package Height
    6.6(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentazione e Risorse

Schede tecniche
Risorse di progettazione