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2N3906TREPBFREE|CNTRSEMI|simage
2N3906TREPBFREE|CNTRSEMI|limage
BJT GP

2N3906 TRE PBFREE

Trans GP BJT PNP 40V 0.2A 625mW 3-Pin TO-92 T/R

Central Semiconductor
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    EA
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Small Signal
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    40
  • Maximum Collector-Emitter Voltage (V)
    40
  • Maximum Base-Emitter Voltage (V)
    5
  • Maximum Base-Emitter Saturation Voltage (V)
    0.85@1mA@10mA|0.95@5mA@50mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.25@1mA@10mA|0.4@5mA@50mA
  • Maximum DC Collector Current (A)
    0.2
  • Minimum DC Current Gain
    60@0.1mA@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V|100@1mA@1V
  • Maximum Power Dissipation (mW)
    625
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Through Hole
  • Package Height
    5.33(Max)
  • Package Width
    4.19(Max)
  • Package Length
    5.21(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-92
  • Pin Count
    3

Documentazione e Risorse

Schede tecniche
Risorse di progettazione