Product Technical Specifications
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Obsolete
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Maximum Continuous Drain Current (A)
4.2
Maximum Gate-Source Leakage Current (nA)
10000
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
50@10V
Typical Gate Charge @ Vgs (nC)
10@10V
Typical Gate Charge @ 10V (nC)
10
Typical Input Capacitance @ Vds (pF)
470@10V
Maximum Power Dissipation (mW)
1480
Typical Fall Time (ns)
4
Typical Rise Time (ns)
5.2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Surface Mount
Package Height
0.8
Package Width
2.4
Package Length
2.9
PCB changed
8
Supplier Package
PS
Pin Count
8
Lead Shape
Flat