GP BJT

TBC847B,LM(T

Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23 T/R

Toshiba

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Small Signal

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  60

• Maximum Collector-Emitter Voltage (V)

  50

• Maximum Base-Emitter Voltage (V)

  6

• Maximum Base-Emitter Saturation Voltage (V)

  0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.2@0.5mA@10mA|0.4@5mA@100mA

• Maximum DC Collector Current (A)

  0.15

• Minimum DC Current Gain

  200@2mA@5V

• Maximum Power Dissipation (mW)

  320

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.9

• Package Width

  1.3

• Package Length

  2.9

• PCB changed

  3

• Standard Package Name

  SOT

• Supplier Package

  SOT-23

• Pin Count

  3