IGBT Chip
STGWA40M120DF3
Trans IGBT Chip N-CH 1200V 80A 468W 3-Pin(3+Tab) TO-247 Tube
STMicroelectronicsProduct Technical Specifications
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
Automotive
No
PPAP
No
Technology
Field Stop|Trench
Channel Type
N
Configuration
Single
Maximum Gate Emitter Voltage (V)
±20
Maximum Collector-Emitter Voltage (V)
1200
Typical Collector-Emitter Saturation Voltage (V)
1.85
Maximum Continuous DC Collector Current (A)
80
Maximum Gate Emitter Leakage Current (uA)
0.25
Maximum Power Dissipation (mW)
468
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Industrial
Packaging
Tube
Mounting
Through Hole
Package Height
21
Package Width
5
Package Length
15.8
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
3
Lead Shape
Through Hole

