IGBT Chip

STGW75H65DFB2-4

Trans IGBT Chip N-CH 650V 115A 357W 4-Pin(4+Tab) TO-247 Tube

STMicroelectronics

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Technology

  Field Stop|Trench

• Channel Type

  N

• Configuration

  Single Dual Emitter

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  650

• Typical Collector-Emitter Saturation Voltage (V)

  1.55

• Maximum Continuous DC Collector Current (A)

  115

• Maximum Gate Emitter Leakage Current (uA)

  0.25

• Maximum Power Dissipation (mW)

  357

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Industrial

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  21

• Package Width

  5

• Package Length

  15.8

• PCB changed

  4

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  4