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STB12NK80ZT4|STMICRO|simage
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MOSFET

STB12NK80ZT4

Trans MOSFET N-CH 800V 10.5A 3-Pin(2+Tab) D2PAK T/R

STMicroelectronics
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    COMPONENTS
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    800
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Continuous Drain Current (A)
    10.5
  • Maximum Drain-Source Resistance (mOhm)
    750@10V
  • Typical Gate Charge @ Vgs (nC)
    87@10V
  • Typical Gate Charge @ 10V (nC)
    87
  • Typical Input Capacitance @ Vds (pF)
    2620@25V
  • Maximum Power Dissipation (mW)
    190000
  • Typical Fall Time (ns)
    20
  • Typical Rise Time (ns)
    18
  • Typical Turn-Off Delay Time (ns)
    70
  • Typical Turn-On Delay Time (ns)
    30
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Industrial
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.6(Max)
  • Package Width
    9.35(Max)
  • Package Length
    10.4(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentazione e Risorse

Schede tecniche
Risorse di progettazione