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SQ2362CEST1GE3|VISHAY|simage
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MOSFET

SQ2362CES-T1_GE3

Trans MOSFET N-CH 60V 4.3A Automotive 3-Pin SOT-23 T/R

Vishay
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Specifiche Tecniche del Prodotto
  • RoHS (Unión Europea)
    Compliant
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    EA
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    4.3
  • Maximum Drain-Source Resistance (mOhm)
    68@10V
  • Typical Gate Charge @ Vgs (nC)
    8.1@10V
  • Typical Gate Charge @ 10V (nC)
    8.1
  • Typical Input Capacitance @ Vds (pF)
    462@30V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    18
  • Typical Rise Time (ns)
    20
  • Typical Turn-Off Delay Time (ns)
    14
  • Typical Turn-On Delay Time (ns)
    6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.02(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3.04(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3

Documentazione e Risorse

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Risorse di progettazione