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MOSFET

SQ2337ES-T1_GE3

Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R Automotive AEC-Q101

Vishay
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Obsolete
  • Codice HTS
    8541.29.00.95
  • Automotive
    Yes
  • PPAP
    Yes
  • Category
    Power MOSFET
  • Configuration
    Single
  • Process Technology
    2700nm
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    80
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    2.2
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    290@10V
  • Typical Gate Charge @ Vgs (nC)
    11.5@10V
  • Typical Gate Charge @ 10V (nC)
    11.5
  • Typical Input Capacitance @ Vds (pF)
    495@40V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    8
  • Typical Rise Time (ns)
    10
  • Typical Turn-Off Delay Time (ns)
    18
  • Typical Turn-On Delay Time (ns)
    5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.02(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3.04(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentazione e Risorse

Schede tecniche
Risorse di progettazione