MOSFETs

SIHG050N60E-GE3

SIHG050N60E-GE3 Vishay MOSFETs Transistor N-CH 600V 51A 3-Pin(3+Tab) TO-247AC - Arrow.com

Vishay

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  SIHG050N60E-GE3

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  ±30

• Maximum Continuous Drain Current (A)

  51

• Maximum Drain-Source Resistance (mOhm)

  50@10V

• Typical Gate Charge @ Vgs (nC)

  65@10V

• Typical Gate Charge @ 10V (nC)

  65

• Typical Input Capacitance @ Vds (pF)

  3459@100V

• Maximum Power Dissipation (mW)

  278000

• Typical Fall Time (ns)

  48

• Typical Rise Time (ns)

  82

• Typical Turn-Off Delay Time (ns)

  67

• Typical Turn-On Delay Time (ns)

  35

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Mounting

  Through Hole

• Package Height

  20.82(Max)

• Package Width

  5.31(Max)

• Package Length

  15.87(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247AC

• Pin Count

  3