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PMDPB80XP115|NEXPERIA|simage
PMDPB80XP115|NEXPERIA|limage
MOSFETs

PMDPB80XP,115

Trans MOSFET P-CH 20V 2.7A 6-Pin HUSON EP T/R

Nexperia
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    12
  • Maximum Gate Threshold Voltage (V)
    1
  • Maximum Continuous Drain Current (A)
    2.7
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    102@4.5V
  • Typical Gate Charge @ Vgs (nC)
    5.7@4.5V
  • Typical Input Capacitance @ Vds (pF)
    550@10V
  • Maximum Power Dissipation (mW)
    1100
  • Typical Fall Time (ns)
    50
  • Typical Rise Time (ns)
    14
  • Typical Turn-Off Delay Time (ns)
    120
  • Typical Turn-On Delay Time (ns)
    6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.61(Max)
  • Package Width
    2
  • Package Length
    2
  • PCB changed
    6
  • Standard Package Name
    SON
  • Supplier Package
    HUSON EP
  • Pin Count
    6
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources