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MMBT100|ONSEMI|simage
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BJT GP

MMBT100

Trans GP BJT NPN 45V 0.5A 350mW 3-Pin SOT-23 T/R

onsemi
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Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Small Signal
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    75
  • Maximum Collector-Emitter Voltage (V)
    45
  • Maximum Base-Emitter Voltage (V)
    6
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Base-Emitter Saturation Voltage (V)
    0.85@1mA@10mA|1@20mA@200mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.2@1mA@10mA|0.4@20mA@200mA
  • Maximum DC Collector Current (A)
    0.5
  • Maximum Collector Cut-Off Current (nA)
    50
  • Minimum DC Current Gain
    80@100uA@1V|100@10mA@1V|100@100mA@1V|100@150mA@5V
  • Maximum Power Dissipation (mW)
    350
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.94
  • Package Width
    1.3
  • Package Length
    2.9
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentazione e Risorse

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Risorse di progettazione