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onsemiMJF6388GDarlington BJT
Trans Darlington NPN 100V 10A 2000mW 3-Pin(3+Tab) TO-220FP Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 2.8@0.01A@5A|4.5@0.1A@10A | |
| 10 | |
| 10 | |
| 2@6mA@3A|2.5@80mA@8A|2@0.01A@5A|3@0.1A@10A | |
| 100@10A@3V|1000@5A@3V|200@8A@4V|3000@3A@4V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 16.12(Max) |
| Package Width | 4.9(Max) |
| Package Length | 10.63(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| 3 | |
| Lead Shape | Through Hole |
Traditional transistors can produce low current gains. One of ON Semiconductor's NPN MJF6388G Darlington transistors can provide you with the much higher values you need. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 100@10A@3 V|1000@5A@3V|200@8A@4V|3000@3A@4V. It has a maximum collector emitter saturation voltage of 2@6mA@3A|2.5@80mA@8A|2@0.01A@5A|3@0.1A@10A V. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 2.8@0.01A@5A|4.5@0.1A@10A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 10 V.
| EDA / CAD Models |
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