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MOSFET

IPTG029N13NM6ATMA1

Trans MOSFET N-CH 135V 24A 9-Pin(8+Tab) HSOG T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.29.00.55
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Seven Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    135
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    24
  • Maximum Drain-Source Resistance (mOhm)
    2.8@15V
  • Typical Gate Charge @ Vgs (nC)
    104@10V
  • Typical Gate Charge @ 10V (nC)
    104
  • Typical Input Capacitance @ Vds (pF)
    7100@68V
  • Maximum Power Dissipation (mW)
    3800
  • Typical Fall Time (ns)
    13
  • Typical Rise Time (ns)
    12
  • Typical Turn-Off Delay Time (ns)
    32
  • Typical Turn-On Delay Time (ns)
    16
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.3
  • Package Width
    8.55
  • Package Length
    9.9
  • PCB changed
    8
  • Tab
    Tab
  • Supplier Package
    HSOG
  • Pin Count
    9

Documentation and Resources

Datasheets
Design resources