MOSFET

IPD25N06S4L30ATMA2

Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

Infineon Technologies AG

Specifiche Tecniche del Prodotto

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±16

• Maximum Gate Threshold Voltage (V)

  2.2

• Maximum Continuous Drain Current (A)

  25

• Maximum Drain-Source Resistance (mOhm)

  30@10V

• Typical Gate Charge @ Vgs (nC)

  12.5@10V

• Typical Gate Charge @ 10V (nC)

  12.5

• Typical Input Capacitance @ Vds (pF)

  935@25V

• Maximum Power Dissipation (mW)

  29000

• Typical Fall Time (ns)

  2

• Typical Rise Time (ns)

  1

• Typical Turn-Off Delay Time (ns)

  15

• Typical Turn-On Delay Time (ns)

  6

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  23@10V|36@4.5V

• Mounting

  Surface Mount

• Package Height

  2.3 mm

• Package Width

  6.22 mm

• Package Length

  6.5 mm

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  DPAK

• Pin Count

  3