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GRPDATAJANTX2N6990|SEMICOA|simage
GRPDATAJANTX2N6990|SEMICOA|limage
BJT GP

GRP-DATA-JANTX2N6990

Trans GP BJT NPN 50V 0.8A 1000mW 14-Pin FPAK

Semicoa Semiconductors
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Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Not Compliant
  • Stato del componente
    Active
  • Codice HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Quad
  • Number of Elements per Chip
    4
  • Maximum Collector-Base Voltage (V)
    75
  • Maximum Collector-Emitter Voltage (V)
    50
  • Maximum Base-Emitter Voltage (V)
    6
  • Maximum Base-Emitter Saturation Voltage (V)
    2@50mA@500mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    1@50mA@500mA
  • Maximum DC Collector Current (A)
    0.8
  • Minimum DC Current Gain
    75@1mA@10V|100@150mA@10V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Supplier Temperature Grade
    Military
  • Mounting
    Surface Mount
  • Package Height
    2.92(Max) mm
  • Package Width
    6.6(Max) mm
  • Package Length
    7.11(Max) mm
  • PCB changed
    14
  • Supplier Package
    FPAK
  • Pin Count
    14
  • Lead Shape
    Flat

Documentazione e Risorse

Schede tecniche
Risorse di progettazione