moduli IGBT

FP150R07N3E4B11BOSA1

Trans IGBT Module N-CH 650V 150A 430W 43-Pin ECONO3-3 Tray

Infineon Technologies AG

Specifiche Tecniche del Prodotto

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Hex

• Typical Collector-Emitter Saturation Voltage (V)

  1.55

• Maximum Collector-Emitter Voltage (V)

  650

• Maximum Power Dissipation (mW)

  430

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  150

• Maximum Gate Emitter Leakage Current (uA)

  0.4

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tray

• Mounting

  Screw

• Package Height

  17 mm

• Package Width

  62 mm

• Package Length

  122 mm

• PCB changed

  43

• Supplier Package

  ECONO3-3

• Pin Count

  43