C4D30120H

Product Overview and Breakdown of Wolfspeed, INC’s 1200 V Discrete Silicon Carbide Schottky Diode

Wolfspeed products set the standard for performance, ruggedness, and ease of design-in. Our engineers leverage 10 trillion hours of experience to help you develop renewable energy solutions that meet emerging efficiency standards and power your success in the marketplace. Wolfspeed’s 1200 V Discrete Silicon Carbide Schottky Diode features Merged PiN Schottky design which is more robust and reliable than the standard. With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

Applications

SiC diodes can be easily paralleled to meet renewable energy demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes can provide lower overall system costs in commercial and industrial solar applications. Maximize efficiency and create a powerful combination by pairing Wolfspeed’s Schottky diodes with Wolfspeed’s SiC MOSFETS for 1.8% higher efficiency than traditional Silicon devices.

Industrial and Commercial Solar Systems benefit from Wolfspeed Silicon Carbide in solar inverters and power optimizers, creating systems that are 50% more power dense while still meeting emerging efficiency standards. Wolfspeed’s C4D30120H has applications in both the Boost for PFC & DC-DC stages and in 3-phase and central solar inverters.

Application Images

C4D30120H is ideally suited for systems 25-30 kW which are the current volume power block for solar and solar based ESS.

Wolfspeed SiC devices enable lighter, smaller, and more efficient solar inverters. Compared to silicon, SiC devices save 500 watts for every second in operation.

Using Wolfspeed Silicon Carbide MOSFETS and Schottky diodes in MPPT boost designs is a cost-effective way to maximize performance and get the most power out of your solar energy system. Wolfspeed’s 60 kW Interleaved Boost Converter reference design demonstrates Wolfspeed’s Silicon Carbide Schottky Diodes in a 4-phase interleaved boost converter.

The additional creepage of Wolfspeed’s Schottky diodes is vital for harsh environments such as outdoor solar installations and adds to system lifetime.

Features:

• •  Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
• •  Zero Reverse Recovery Current / Forward
• •  Temperature-Independent Switching Behavior
• •  1200V VDS to support 400-1000V panel, internal 700-1000V bus
• •  ID = 45A @ 135˚C fit for 25kW matches well with the C3M0040120K for MPPT boost applications as the currents are similar
• •  H package removal of the common cathode connection and associated center pin allows improved creepage and clearance … 8mm vs 5mm for the 3-lead device

Benefits:

• •  Improved system level efficiency
• •  High surge current capability
• •  High frequency operation
• •  Cost effective power density
• •  Easy parallel operation
• •  Reduced heat sink requirements

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Industry leading support from experts at Wolfspeed, INC:

Designing With Silicon Carbide in Energy Storage Applications; Application Note
LTspice and PLECS Models
SpeedFit Design Simulator
Power Applications Forum Request samples