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BCP5610T1G|ONSEMI|simage
BCP5610T1G|ONSEMI|limage
BJT GP

BCP56-10T1G

Trans GP BJT NPN 80V 1A 1500mW 4-Pin(3+Tab) SOT-223 T/R

onsemi
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single Dual Collector
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    100
  • Maximum Collector-Emitter Voltage (V)
    80
  • Maximum Base-Emitter Voltage (V)
    5
  • Operating Junction Temperature (°C)
    -65 to 150
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.5@50mA@500mA
  • Maximum DC Collector Current (A)
    1
  • Maximum Collector Cut-Off Current (nA)
    100
  • Minimum DC Current Gain
    25@5mA@2V|63@150mA@2V|25@500mA@2V
  • Maximum Power Dissipation (mW)
    1500
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.57
  • Package Width
    3.5
  • Package Length
    6.5
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-223
  • Pin Count
    4
  • Lead Shape
    Gull-wing

Documentazione e Risorse

Schede tecniche
Risorse di progettazione