MOSFET

AO4629

Trans MOSFET N/P-CH 30V 6A/5.5A 8-Pin SOIC

Alpha and Omega Semiconductor

Product Technical Specifications

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.29.00.55

• Automotive

  Unknown

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Dual Common Quad Drain

• Channel Mode

  Enhancement

• Channel Type

  N|P

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  6@N Channel|5.5@P Channel

• Maximum Drain-Source Resistance (mOhm)

  30@10V@N Channel|41@10V@P Channel

• Typical Gate Charge @ Vgs (nC)

  5.2@10V|2.55@4.5V@N Channel|9.2@10V|4.6@4.5V@P Channel

• Typical Gate Charge @ 10V (nC)

  5.2@N Channel|9.2@P Channel

• Typical Input Capacitance @ Vds (pF)

  255@15V@N Channel|520@15V@P Channel

• Maximum Power Dissipation (mW)

  2000

• Typical Fall Time (ns)

  3.5@N Channel|7@P Channel

• Typical Rise Time (ns)

  2.5@N Channel|5.5@P Channel

• Typical Turn-Off Delay Time (ns)

  14.5@N Channel|19@P Channel

• Typical Turn-On Delay Time (ns)

  4.5@N Channel|7.5@P Channel

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Typical Drain-Source Resistance @ 25°C (mOhm)

  25@10V|32@10V|33@4.5V|51@4.5V

• Mounting

  Surface Mount

• Package Height

  1.5 mm

• Package Width

  3.9 mm

• Package Length

  4.9 mm

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SOIC

• Pin Count

  8

• Lead Shape

  Gull-wing