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AIMZA75R090M1HXKSA1|INFINEON|simage
AIMZA75R090M1HXKSA1|INFINEON|limage
MOSFET

AIMZA75R090M1HXKSA1

Trans MOSFET N-CH SiC 750V 23A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.29.00.55
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Material
    SiC
  • Configuration
    Single Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    750
  • Maximum Gate-Source Voltage (V)
    23
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    23
  • Maximum Drain-Source Resistance (mOhm)
    117@18V
  • Typical Gate Charge @ Vgs (nC)
    15@18V
  • Typical Input Capacitance @ Vds (pF)
    542@500V
  • Maximum Power Dissipation (mW)
    113000
  • Typical Fall Time (ns)
    10
  • Typical Rise Time (ns)
    7
  • Typical Turn-Off Delay Time (ns)
    13
  • Typical Turn-On Delay Time (ns)
    6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Mounting
    Through Hole
  • Package Height
    21.1(Max)
  • Package Width
    5.1(Max)
  • Package Length
    15.9(Max)
  • PCB changed
    4
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-247
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources