MOSFET
AIMZA75R090M1HXKSA1
Trans MOSFET N-CH SiC 750V 23A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101
Infineon Technologies AGProduct Technical Specifications
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
750
Maximum Gate-Source Voltage (V)
23
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
23
Maximum Drain-Source Resistance (mOhm)
117@18V
Typical Gate Charge @ Vgs (nC)
15@18V
Typical Input Capacitance @ Vds (pF)
542@500V
Maximum Power Dissipation (mW)
113000
Typical Fall Time (ns)
10
Typical Rise Time (ns)
7
Typical Turn-Off Delay Time (ns)
13
Typical Turn-On Delay Time (ns)
6
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Automotive
Mounting
Through Hole
Package Height
21.1(Max)
Package Width
5.1(Max)
Package Length
15.9(Max)
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4

