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2SD1624STDE|ONSEMI|simage
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BJT GP

2SD1624S-TD-E

Trans GP BJT NPN 50V 3A 500mW 4-Pin(3+Tab) SOT-89 T/R

onsemi
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    COMPONENTS
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Small Signal
  • Material
    Si
  • Configuration
    Single Dual Collector
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    60
  • Maximum Collector-Emitter Voltage (V)
    50
  • Maximum Base-Emitter Voltage (V)
    6
  • Operating Junction Temperature (°C)
    150
  • Maximum Base-Emitter Saturation Voltage (V)
    1.2@100mA@2A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.5@100mA@2A
  • Maximum DC Collector Current (A)
    3
  • Minimum DC Current Gain
    140@100mA@2V
  • Maximum Power Dissipation (mW)
    500
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.5
  • Package Width
    2.5
  • Package Length
    4.5
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-89
  • Pin Count
    4
  • Lead Shape
    Flat

Documentazione e Risorse

Schede tecniche
Risorse di progettazione