Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
150
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
18
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
59@10V
Typical Gate Charge @ Vgs (nC)
7@10V
Typical Gate Charge @ 10V (nC)
7
Typical Input Capacitance @ Vds (pF)
460@75V
Maximum Power Dissipation (mW)
42000
Typical Fall Time (ns)
4.5
Typical Rise Time (ns)
5.2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
0.95
Package Width
5
Package Length
5
PCB changed
8
Standard Package Name
SO
Supplier Package
SOP Advance
Pin Count
8