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TK33S10N1ZLQ|TOSHIBA|simage
TK33S10N1ZLQ|TOSHIBA|limage
MOSFETs

TK33S10N1Z,LQ

Trans MOSFET N-CH Si 100V 33A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101

Toshiba
Hojas de datos 

Especificaciones técnicas del producto
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    33
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    10
  • Maximum Drain-Source Resistance (mOhm)
    9.7@10V
  • Typical Gate Charge @ Vgs (nC)
    28@10V
  • Typical Gate Charge @ 10V (nC)
    28
  • Typical Input Capacitance @ Vds (pF)
    2050@10V
  • Maximum Power Dissipation (mW)
    125000
  • Typical Fall Time (ns)
    11.5
  • Typical Rise Time (ns)
    8.4
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.3
  • Package Width
    5.5
  • Package Length
    6.5
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK+
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentación y Recursos

Hojas de datos
Recursos de diseño