MOSFETs

TK100E08N1,S1X

Trans MOSFET N-CH Si 80V 214A 3-Pin(3+Tab) TO-220 Magazine

Toshiba

Especificaciones técnicas del producto

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  NRND

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  80

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  214

• Maximum Drain-Source Resistance (mOhm)

  3.2@10V

• Typical Gate Charge @ Vgs (nC)

  130@10V

• Typical Gate Charge @ 10V (nC)

  130

• Typical Input Capacitance @ Vds (pF)

  9000@40V

• Maximum Power Dissipation (mW)

  255000

• Typical Fall Time (ns)

  140

• Typical Rise Time (ns)

  53

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Magazine

• Mounting

  Through Hole

• Package Height

  8.59

• Package Width

  4.45

• Package Length

  10.16

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220

• Pin Count

  3