MOSFETs

TK100A06N1,S4X(S

Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220SIS Magazine

Toshiba

Especificaciones técnicas del producto

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  263

• Maximum Drain-Source Resistance (mOhm)

  2.7@10V

• Typical Gate Charge @ Vgs (nC)

  140@10V

• Typical Gate Charge @ 10V (nC)

  140

• Typical Input Capacitance @ Vds (pF)

  10500@30V

• Maximum Power Dissipation (mW)

  45000

• Typical Fall Time (ns)

  64

• Typical Rise Time (ns)

  67

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Magazine

• Mounting

  Through Hole

• Package Height

  15

• Package Width

  4.5

• Package Length

  10

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220SIS

• Pin Count

  3