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STL3NM60N|STMICRO|simage
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MOSFET

STL3NM60N

Trans MOSFET N-CH 600V 0.65A 8-Pin Power Flat EP T/R

STMicroelectronics
Hojas de datos 

Especificaciones técnicas del producto
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    ±25
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    0.65
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    1800@10V
  • Typical Gate Charge @ Vgs (nC)
    9.5@10V
  • Typical Gate Charge @ 10V (nC)
    9.5
  • Typical Input Capacitance @ Vds (pF)
    188@50V
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    20
  • Typical Rise Time (ns)
    6.2
  • Typical Turn-Off Delay Time (ns)
    20.8
  • Typical Turn-On Delay Time (ns)
    8.6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.88
  • Package Width
    3.3
  • Package Length
    3.3
  • PCB changed
    8
  • Supplier Package
    Power Flat EP
  • Pin Count
    8
  • Lead Shape
    No Lead

Documentación y Recursos

Hojas de datos
Recursos de diseño