Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
12
Maximum Gate-Source Voltage (V)
±6
Maximum Gate Threshold Voltage (V)
1
Maximum Continuous Drain Current (A)
12
Maximum Gate-Source Leakage Current (nA)
1000
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
12@4.5V
Typical Gate Charge @ Vgs (nC)
37.6@4.5V
Typical Input Capacitance @ Vds (pF)
2700@10V
Maximum Power Dissipation (mW)
2500
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
0.75(Max)
Package Width
2
Package Length
2
PCB changed
6
Standard Package Name
DFN
Supplier Package
UDFN-B EP
Pin Count
6
Lead Shape
No Lead
Cantidad de Pedido