MOSFET

SSM3K15ACT,L3F

Trans MOSFET N-CH Si 30V 0.1A 3-Pin CST T/R

Toshiba

Especificaciones técnicas del producto

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.21.00.95

• Automotive

  No

• PPAP

  No

• Category

  Small Signal

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  1.5

• Maximum Continuous Drain Current (A)

  0.1

• Maximum Gate-Source Leakage Current (nA)

  1000

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  3600@4V

• Typical Input Capacitance @ Vds (pF)

  13.5@3V

• Maximum Power Dissipation (mW)

  100

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Width

  1

• Package Length

  0.6

• PCB changed

  3

• Supplier Package

  CST

• Pin Count

  3