Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Obsolete
Código HTS
8541.29.00.95
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
2.4
Maximum Continuous Drain Current (A)
15.6
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
11.5@10V
Typical Gate Charge @ Vgs (nC)
4.5@4.5V|10@10V
Typical Gate Charge @ 10V (nC)
10
Typical Input Capacitance @ Vds (pF)
650@15V
Maximum Power Dissipation (mW)
3700
Typical Fall Time (ns)
7|10
Typical Rise Time (ns)
50|15
Typical Turn-Off Delay Time (ns)
16|17
Typical Turn-On Delay Time (ns)
8|15
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Surface Mount
Package Height
0.75(Max)
Package Width
3
Package Length
3
PCB changed
8
Supplier Package
PowerPAIR EP
Pin Count
8
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