Especificaciones técnicas del producto
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
45.6
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
1.5@10V
Typical Gate Charge @ Vgs (nC)
41@4.5V|89@10V
Typical Gate Charge @ 10V (nC)
89
Typical Gate to Drain Charge (nC)
10.8
Typical Gate to Source Charge (nC)
17.4
Typical Reverse Recovery Charge (nC)
70
Typical Input Capacitance @ Vds (pF)
5900@30V
Typical Reverse Transfer Capacitance @ Vds (pF)
60@30V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
1340
Maximum Power Dissipation (mW)
6250
Typical Fall Time (ns)
20
Typical Rise Time (ns)
235
Typical Turn-Off Delay Time (ns)
47
Typical Turn-On Delay Time (ns)
40
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
1.2@10V|1.7@4.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
6.25
Maximum Pulsed Drain Current @ TC=25°C (A)
400
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
20
Typical Diode Forward Voltage (V)
0.71
Typical Gate Plateau Voltage (V)
3
Typical Reverse Recovery Time (ns)
54
Maximum Diode Forward Voltage (V)
1.1
Minimum Gate Resistance (Ohm)
0.3
Maximum Gate Resistance (Ohm)
1.5
Maximum Positive Gate-Source Voltage (V)
20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
45.6
Mounting
Surface Mount
Package Height
1.02
Package Width
5.89
Package Length
4.9
PCB changed
8
Supplier Package
PowerPAK SO EP
Pin Count
8