Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Operating Junction Temperature (°C)
150
Maximum Continuous Drain Current (A)
95
Maximum Drain-Source Resistance (mOhm)
3.6@10V
Typical Gate Charge @ Vgs (nC)
25@10V|12.5@4.5V
Typical Gate Charge @ 10V (nC)
25
Typical Input Capacitance @ Vds (pF)
1580@20V
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
17
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
51
Typical Turn-On Delay Time (ns)
15
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
0.85(Max)
Package Width
3.1(Max)
Package Length
3.3(Max)
PCB changed
8
Supplier Package
HSMT EP
Pin Count
8