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NVMFD5C478NT1G|ONSEMI|simage
NVMFD5C478NT1G|ONSEMI|limage
MOSFETs

NVMFD5C478NT1G

Trans MOSFET N-CH 40V 9.8A Automotive AEC-Q101 8-Pin DFN EP T/R

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Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    8541.29.00.55
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    Yes
  • PPAP
    Yes
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    9.8
  • Maximum Drain-Source Resistance (mOhm)
    17@10V
  • Typical Gate Charge @ Vgs (nC)
    6.3@10V
  • Typical Gate Charge @ 10V (nC)
    6.3
  • Typical Input Capacitance @ Vds (pF)
    325@25V
  • Maximum Power Dissipation (mW)
    3100
  • Typical Fall Time (ns)
    4.5
  • Typical Rise Time (ns)
    13
  • Typical Turn-Off Delay Time (ns)
    14
  • Typical Turn-On Delay Time (ns)
    7
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.05(Max)
  • Package Width
    5.9
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    DFN
  • Supplier Package
    DFN EP
  • Pin Count
    8

Documentación y Recursos

Hojas de datos
Recursos de diseño