Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L
Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Hex Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
22
Maximum Continuous Drain Current (A)
145
Maximum Drain-Source Resistance (mOhm)
15.34(Typ)@18V
Typical Gate Charge @ Vgs (nC)
283@18V
Typical Gate Charge @ 10V (nC)
283
Typical Input Capacitance @ Vds (pF)
5516@325V
Maximum Power Dissipation (mW)
500000
Typical Fall Time (ns)
13.48
Typical Rise Time (ns)
14.32
Typical Turn-Off Delay Time (ns)
69.3
Typical Turn-On Delay Time (ns)
48.65
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
4.5
Package Width
9.2
Package Length
9.9
PCB changed
7
Tab
Tab
Standard Package Name
TO
Supplier Package
D2PAK
Pin Count
8