Chips DRAM

NT5CC256M16EP-EK

DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin VFBGA

Nanya Technology

Especificaciones técnicas del producto

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Unconfirmed

• 美国海关商品代码

  8542.32.00.36

• Automotive

  Unknown

• PPAP

  Unknown

• DRAM Type

  DDR3L SDRAM

• Chip Density (bit)

  4G

• Organization

  256Mx16

• Number of Internal Banks

  8

• Number of Words per Bank

  32M

• Number of Bits/Word (bit)

  16

• Data Bus Width (bit)

  16

• Maximum Clock Rate (MHz)

  1866

• Maximum Access Time (ns)

  20

• Address Bus Width (bit)

  18

• Process Technology

  20nm

• Interface Type

  SSTL_135

• Minimum Operating Supply Voltage (V)

  1.283

• Maximum Operating Supply Voltage (V)

  1.45

• Operating Current (mA)

  130

• Minimum Operating Temperature (°C)

  0

• Maximum Operating Temperature (°C)

  95

• Supplier Temperature Grade

  Commercial

• Number of I/O Lines (bit)

  16

• Mounting

  Surface Mount

• Package Height

  0.8(Max)

• Package Width

  8

• Package Length

  13

• PCB changed

  96

• Standard Package Name

  BGA

• Supplier Package

  VFBGA

• Pin Count

  96