GP BJT

JANTX2N4029

Trans GP BJT PNP 80V 1A 500mW 3-Pin TO-18

Semicoa Semiconductors

Especificaciones técnicas del producto

• 유럽 연합 RoHS 명령어

  Not Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.21.00.75

• Automotive

  No

• PPAP

  No

• Type

  PNP

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  80

• Maximum Collector-Emitter Voltage (V)

  80

• Maximum Base-Emitter Voltage (V)

  5

• Maximum Base-Emitter Saturation Voltage (V)

  0.9@15mA@150mA|1.2@50mA@500mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.15@15mA@150mA|0.5@50mA@500mA|1@100mA@1A

• Maximum DC Collector Current (A)

  1

• Minimum DC Current Gain

  50@100uA@5V|100@100mA@5V|70@500mA@5V|25@1A@5V

• Maximum Power Dissipation (mW)

  500

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Supplier Temperature Grade

  Military

• Diameter

  5.84(Max)

• Mounting

  Through Hole

• Package Height

  5.33(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-18

• Pin Count

  3

• Lead Shape

  Through Hole