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GP BJT

JAN2N3501

Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39

Semicoa Semiconductors

Especificaciones técnicas del producto

• RoHS (Unión Europea)

  Not Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Código HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  150

• Maximum Collector-Emitter Voltage (V)

  150

• Maximum Base-Emitter Voltage (V)

  6

• Operating Junction Temperature (°C)

  -65 to 200

• Maximum Base-Emitter Saturation Voltage (V)

  0.8@1mA@10mA|1.2@15mA@150mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.2@1mA@10mA|0.4@15mA@150mA

• Maximum DC Collector Current (A)

  0.3

• Minimum DC Current Gain

  35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V

• Maximum Power Dissipation (mW)

  1000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Supplier Temperature Grade

  Military

• Diameter

  9.4(Max)

• Mounting

  Through Hole

• Package Height

  6.6(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-39

• Pin Count

  3

• Lead Shape

  Through Hole