Especificaciones técnicas del producto
EU RoHS
Compliant
Part Status
Active
SVHC
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
HEXFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±16
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
2.7
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
20
Maximum Drain-Source Resistance (mOhm)
92@10V
Typical Gate Charge @ Vgs (nC)
2.5@4.5V
Typical Gate to Drain Charge (nC)
1.3
Typical Gate to Source Charge (nC)
0.7
Typical Reverse Recovery Charge (nC)
13
Typical Input Capacitance @ Vds (pF)
290@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
21@25V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
37
Maximum Power Dissipation (mW)
1250
Typical Fall Time (ns)
4.2
Typical Rise Time (ns)
6.3
Typical Turn-Off Delay Time (ns)
6.8
Typical Turn-On Delay Time (ns)
5.4
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
78@10V|98@4.5V
Maximum Pulsed Drain Current @ TC=25°C (A)
11
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
100
Typical Gate Plateau Voltage (V)
3.5
Typical Reverse Recovery Time (ns)
14
Maximum Diode Forward Voltage (V)
1.3
Maximum Positive Gate-Source Voltage (V)
16