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MOSFETs

IRFB812PBF

Trans MOSFET N-CH 500V 3.6A 3-Pin(3+Tab) TO-220AB Tube

Infineon Technologies AG
Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unión Europea)
    Compliant
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Obsolete
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    500
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    5
  • Maximum Continuous Drain Current (A)
    3.6
  • Maximum Drain-Source Resistance (mOhm)
    2200@10V
  • Typical Gate Charge @ Vgs (nC)
    20(Max)@10V
  • Typical Gate Charge @ 10V (nC)
    20(Max)
  • Typical Input Capacitance @ Vds (pF)
    810@25V
  • Maximum Power Dissipation (mW)
    78000
  • Typical Fall Time (ns)
    17
  • Typical Rise Time (ns)
    22
  • Typical Turn-Off Delay Time (ns)
    24
  • Typical Turn-On Delay Time (ns)
    14
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    9.02(Max)
  • Package Width
    4.83(Max)
  • Package Length
    10.67(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220AB
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentación y Recursos

Hojas de datos
Recursos de diseño